Structural and micromechanical analyses by polarized Raman spectroscopy of wurtzitic GaN films grown on (0001) sapphire substrates
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4751026
Reference41 articles.
1. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
2. GaN Growth Using GaN Buffer Layer
3. The Blue Laser Diode
4. MOCVD growth of device-quality GaN on sapphire using a three-step approach
5. Three-step growth method for high quality AlN epilayers
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