Resolving alternating stress gradients and dislocation densities across AlxGa1-xN multilayer structures on Si(111)-Reference-Cited by-同舟云学术

Resolving alternating stress gradients and dislocation densities across AlxGa1-xN multilayer structures on Si(111)

Author:

Reisinger M.¹,Tomberger M.²,Zechner J.³,Daumiller I.²,Sartory B.⁴,Ecker W.⁴^ORCID,Keckes J.¹,Lechner R. T.⁵

Affiliation:

1. Department of Materials Physics, Montanuniversitaet Leoben, Franz Josef-Straße 18, 8700 Leoben, Austria

2. Infineon Technologies Austria AG, Siemensstraße 2, 9500 Villach, Austria

3. KAI Kompetenzzentrum Automobil- u. Industrieelektronik GmbH, Europastraße 8, 9524 Villach, Austria

4. Materials Center Leoben Forschung GmbH, Roseggerstraße 12, 8700 Leoben, Austria

5. Institute of Physics, Montanuniversität Leoben, Franz-Josef-Strasse 18, 8700 Leoben, Austria

Funder

Kärntner Wirtschaftsförderungsfonds

Österreichische Forschungsförderungsgesellschaft

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

Reference32 articles.

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