Influence of stress on structural properties of AlGaN/GaN high electron mobility transistor layers grown on 150 mm diameter Si (111) substrate-Reference-Cited by-同舟云学术

Influence of stress on structural properties of AlGaN/GaN high electron mobility transistor layers grown on 150 mm diameter Si (111) substrate

Published:2013-01-14 Issue:2 Volume:113 Page:023510
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Liu H. F.,Dolmanan S. B.,Zhang L.,Chua S. J.,Chi D. Z.,Heuken M.,Tripathy S.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4774288

Reference25 articles.

1. Epitaxy of GaN on silicon—impact of symmetry and surface reconstruction

2. J. W. Chung, K. Ryu, B. Liu, and T. Palacios, in Proceedings of the European IEEE Solid-State Device Research Conference (ESSDERC) (IEEE, 2010), pp. 52–56.

3. GaN-based LEDs grown on 6-inch diameter Si (111) substrates by MOVPE

4. MOVPE growth of GaN on Si(111) substrates

5. Stress and Defect Control in GaN Using Low Temperature Interlayers

Cited by 55 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Distinct phase-selective corrosions of Ti-48Al alloy in aqueous electrolyte and molten salt;Corrosion Science;2024-05

2. Interface structures of Al0.85Sc0.15N-on-Si thin films grown by reactive magnetron sputtering upon post-growth cyclic rapid thermal annealing;Journal of Applied Physics;2024-03-01

3. Effect of High Al Content AlGaN Buffer Layer on the Properties of GaN‐on‐Silicon Materials;physica status solidi (a);2023-11-22

4. GaN-based power high-electron-mobility transistors on Si substrates: from materials to devices;Semiconductor Science and Technology;2023-04-25

5. Compositional Mapping of the AlGaN Alloy Composition in Graded Buffer Structures Using Cathodoluminescence;physica status solidi (a);2023-04-05