GaN-based LEDs grown on 6-inch diameter Si (111) substrates by MOVPE-Reference-Cited by-同舟云学术

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GaN-based LEDs grown on 6-inch diameter Si (111) substrates by MOVPE

Published:2009-02-12 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
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Author:

Zhu D.,McAleese C.,McLaughlin K. K.,Häberlen M.,Salcianu C. O.,Thrush E. J.,Kappers M. J.,Phillips W. A.,Lane P.,Wallis D. J.,Martin T.,Astles M.,Thomas S.,Pakes A.,Heuken M.,Humphreys C. J.

Publisher

SPIE

Cited by 41 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Design of step-graded AlGaN buffers for GaN-on-Si heterostructures grown by MOCVD;Semiconductor Science and Technology;2023-02-22

2. High-Density Fiberless Optoelectrodes with Integrated Waveguides and μLEDs;Handbook of Neuroengineering;2023

3. Temperature dependent lattice expansions of epitaxial GaN-on-Si heterostructures characterized by in- and ex-situ X-ray diffraction;Journal of Alloys and Compounds;2021-07

4. Method for inferring the mechanical strain of GaN-on-Si epitaxial layers using optical profilometry and finite element analysis;Optical Materials Express;2021-05-07

5. III-nitride semiconductor lasers grown on Si;Progress in Quantum Electronics;2021-05

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