Method for inferring the mechanical strain of GaN-on-Si epitaxial layers using optical profilometry and finite element analysis-Reference-Cited by-同舟云学术

Method for inferring the mechanical strain of GaN-on-Si epitaxial layers using optical profilometry and finite element analysis

Published:2021-05-07 Issue:6 Volume:11 Page:1643
ISSN:2159-3930
Container-title:Optical Materials Express
language:en
Short-container-title:Opt. Mater. Express

Author:

Spiridon B. F.,Toon M.,Hinz A.,Ghosh S.^ORCID,Fairclough S. M.,Guilhabert B. J. E.^ORCID,Strain M. J.^ORCID,Watson I. M.,Dawson M. D.^ORCID,Wallis D. J.,Oliver R. A.

Funder

Engineering and Physical Sciences Research Council

Cambridge Trust

Deutsche Forschungsgemeinschaft

Publisher

The Optical Society

Subject

Electronic, Optical and Magnetic Materials

Reference35 articles.

1. Transfer Printing Techniques for Materials Assembly and Micro/Nanodevice Fabrication

2. Stretchable Active Matrix Inorganic Light-Emitting Diode Display Enabled by Overlay-Aligned Roll-Transfer Printing

3. Transfer print techniques for heterogeneous integration of photonic components

4. The 2018 GaN power electronics roadmap

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