Crystalline and band alignment properties of InAs/Ge (111) heterostructure-Reference-Cited by-同舟云学术

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Crystalline and band alignment properties of InAs/Ge (111) heterostructure

Published:2015-10 Issue: Volume:646 Page:393-398
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Pal Suparna,Singh S.D.,Dixit V.K.,Sharma T.K.,Kumar R.,Sinha A.K.,Sathe V.,Phase D.M.,Mukherjee C.,Ingale Alka

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference40 articles.

1. Direct Heteroepitaxy of Vertical InAs Nanowires on Si Substrates for Broad Band Photovoltaics and Photodetection

2. Evolution of InAs branches in InAs∕GaAs nanowire heterostructures

3. Junctions in Axial III−V Heterostructure Nanowires Obtained via an Interchange of Group III Elements

4. Measurement of GaN/Ge(001) Heterojunction Valence Band Offset by X-Ray Photoelectron Spectroscopy

5. Study of band offsets in InN/Ge heterojunctions

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2. Interface band alignment engineering of ZnO/Si heterojunction solar cells with high open circuit voltage;Journal of Materials Science: Materials in Electronics;2024-07

3. Investigation of crystalline and band alignment properties of NiO/GaN and Ni_0.5Co_0.5O/GaN heterojunctions using synchrotron radiation based techniques;Physica Scripta;2024-05-13

4. Qualitative Analysis of the Valence and Conduction Band Offset Parameters in FeNiO/CuNiO Bilayer Film Using X‐Ray Photoelectron Spectroscopy;physica status solidi (b);2021-11-17

5. Flat and twin-free InAs layer growth on Ge (1 1 1) substrates;Journal of Crystal Growth;2020-08

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