Flat and twin-free InAs layer growth on Ge (1 1 1) substrates-Reference-Cited by-同舟云学术

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Flat and twin-free InAs layer growth on Ge (1 1 1) substrates

Published:2020-08 Issue: Volume:544 Page:125690
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Kajikawa Y.,Uematsu Y.,Tanabe K.

Funder

Nagoya University

Ministry of Education, Culture, Sports, Science and Technology

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference27 articles.

1. Crystalline and band alignment properties of InAs/Ge (111) heterostructure

2. GaAs (1 1 1) epilayers grown by MBE on Ge (1 1 1): Twin reduction and polarity

3. Problems in low-temperature grown polycrystalline InAs layers on glass and their relief by inserting GaSbAs buffer layers

4. Stacking fault energy and ionicity of cubic III–V compounds

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