Study of band offsets in InN/Ge heterojunctions-Reference-Cited by-同舟云学术

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Study of band offsets in InN/Ge heterojunctions

Published:2011-08 Issue:15-16 Volume:605 Page:L33-L37
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Kumar Mahesh,Bhat Thirumaleshwara N.,Rajpalke Mohana K.,Roul Basanta,Sinha Neeraj,Kalghatgi A.T.,Krupanidhi S.B.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference21 articles.

1. Indium nitride (InN): A review on growth, characterization, and properties

2. Unusual properties of the fundamental band gap of InN

3. Electron cyclotron effective mass in indium nitride

4. Optical bandgap energy of wurtzite InN

5. Terahertz emission by InN

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electronic structures and optical properties of Ga doped single-layer indium nitride;Chinese Journal of Chemical Physics;2018-06

2. Crystalline and band alignment properties of InAs/Ge (111) heterostructure;Journal of Alloys and Compounds;2015-10

3. Band alignment and interfacial structure of ZnO/Ge heterojunction investigated by photoelectron spectroscopy;Applied Physics Letters;2012-11-19

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