Junctions in Axial III−V Heterostructure Nanowires Obtained via an Interchange of Group III Elements-Reference-Cited by-同舟云学术

Junctions in Axial III−V Heterostructure Nanowires Obtained via an Interchange of Group III Elements

Published:2009-10-20 Issue:11 Volume:9 Page:3689-3693
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Krogstrup Peter¹,Yamasaki Jun¹,Sørensen Claus B.¹,Johnson Erik¹,Wagner Jakob B.¹,Pennington Robert¹,Aagesen Martin¹,Tanaka Nobuo¹,Nygård Jesper¹

Affiliation:

1. Nano-Science Center, Niels Bohr Institute, University of Copenhagen, Denmark, EcoTopia Science Institute, Department of Quantum Engineering, Nagoya University, 464-8603, Japan, and Center for Electron Nanoscopy, Technical University of Denmark, Denmark

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl901348d

Reference27 articles.

1. One-dimensional heterostructures in semiconductor nanowhiskers

2. Nanocrystalline Nanowires: I. Structure

3. Novel Growth Phenomena Observed in Axial InAs/GaAs Nanowire Heterostructures

4. Nature of heterointerfaces in GaAs/InAs and InAs/GaAs axial nanowire heterostructures

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