Film/Substrate Orientation Relationship in theAIN/6H-SiC Epitaxial System
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.77.1797/fulltext
Reference24 articles.
1. Reactive molecular beam epitaxy of aluminium nitride
2. Epitaxial Growth of Aluminum Nitride on Sapphire Using Metalorganic Chemical Vapor Deposition
3. Epitaxial growth of AlN by plasma-assisted, gas-source molecular beam epitaxy
4. Interface chemistry and surface morphology in the initial stages of growth of GaN and AlN on α-SiC and sapphire
5. Initial stage of aluminum nitride film growth on 6H‐silicon carbide by plasma‐assisted, gas‐source molecular beam epitaxy
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