Interface chemistry and surface morphology in the initial stages of growth of GaN and AlN on α-SiC and sapphire-Reference-Cited by-同舟云学术

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Interface chemistry and surface morphology in the initial stages of growth of GaN and AlN on α-SiC and sapphire

Published:1994-08 Issue:1-2 Volume:141 Page:11-21
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Sitar Z.,Smith L.L.,Davis R.F.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference17 articles.

1. Edge emission of AlxGa1−xN

2. Energy band‐gap bowing parameter in an AlxGa1−xN alloy

3. Growth of AlN/GaN layered structures by gas source molecular-beam epitaxy

4. AlN/GaN superlattices grown by gas source molecular beam epitaxy

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