Energy band‐gap bowing parameter in an AlxGa1−xN alloy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.338387
Reference26 articles.
1. Properties of AlxGa1−xN films prepared by reactive molecular beam epitaxy
2. Growth and properties of GaxAl1-xN compounds
3. Properties and ion implantation of AlxGa1−xN epitaxial single crystal films prepared by low pressure metalorganic chemical vapor deposition
4. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
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