Author:
Rowland L.B.,Kern R.S.,Tanak S.,Davis Robert F.
Abstract
Monocrystalline AlN(0001) films with few defects were deposited on vicinal α(6H)–SiC(0001) wafers via plasma-assisted, gas-source molecular beam epitaxy within the temperature range of 1050–1200 °C. The Al was thermally evaporated from an effusion cell. An electron cyclotron resonance plasma source was used to produce activated nitrogen species. Growth on vicinal Si(100) at 900–1050 °C resulted in smooth, highly oriented AlN(0001) films.
Publisher
Springer Science and Business Media LLC
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Cited by
54 articles.
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