Reactive molecular-beam epitaxy of GaN layers directly on 6H–SiC(0001)
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.124562
Reference19 articles.
1. Growth of GaN(0001)1×1 on Al2O3(0001) by gas‐source molecular beam epitaxy
2. High Quality Homoepitaxial GaN Grown by Molecular Beam Epitaxy with NH 3 on Surface Cracking
3. GaN grown by molecular beam epitaxy at high growth rates using ammonia as the nitrogen source
4. Efficiency of NH3 as nitrogen source for GaN molecular beam epitaxy
5. Molecular-beam epitaxy of gallium nitride on (0001) sapphire substrates using ammonia
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4. Investigation of GaN crystal quality on silicon substrates using GaN/AlN superlattice structures;Crystal Research and Technology;2007-12
5. Characteristics and Interactions of Threading Dislocations in GaN Films Grown on (0001) Sapphire Substrates With or Without Short-Period Superlattice Insertion;Japanese Journal of Applied Physics;2006-09-07
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