Characterization of semi-polar GaN on GaAs substrates-Reference-Cited by-同舟云学术

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Characterization of semi-polar GaN on GaAs substrates

Published:2015-02 Issue: Volume:411 Page:76-80
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Saengkaew Phannee^ORCID,Sanorpim Sakuntam,Yordsri Visittapong,Thanachayanont Chanchana,Onabe Kentaro

Funder

Thailand Research Fund

Office of the Higher Education Commission

King Mongkut’s university of technology North Bangkok

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference58 articles.

1. III-Nitride Semiconductors and Their Modern Devices;Gil,2013

2. Semipolar GaN grown on foreign substrates: a review

3. Epitaxial growth of cubic and hexagonal GaN on GaAs by gas‐source molecular‐beam epitaxy

4. Controllable cubic and hexagonal GaN growth on GaAs(001) substrates by molecular beam epitaxy

5. Metalorganic Vapor Phase Epitaxy Growth of High Quality Cubic GaN on GaAs (100) Substrates

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. ScN/GaN(11̅00): A New Platform for the Epitaxy of Twin-Free Metal–Semiconductor Heterostructures;Nano Letters;2024-05-17

2. Effect of different substrates on material properties of cubic GaN thin films grown by LP-MOCVD method;Journal of Crystal Growth;2023-01

3. Growth and characterization of cubic GaN grown on GaAs (110) substrate by MOVPE;Materials Science in Semiconductor Processing;2021-09

4. Influence of Nucleation Layers on MOVPE Growth of Semipolar ($$11{\bar{2}}2$$) GaN on m-Plane Sapphire;Journal of Electronic Materials;2021-05-21

5. Metal organic chemical vapor deposition of m-plane GaN epi-layer using a three-step approach towards enhanced surface morphology;Thin Solid Films;2018-12

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