ScN/GaN(11̅00): A New Platform for the Epitaxy of Twin-Free Metal–Semiconductor Heterostructures-Reference-Cited by-同舟云学术

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ScN/GaN(11̅00): A New Platform for the Epitaxy of Twin-Free Metal–Semiconductor Heterostructures

Published:2024-05-17 Issue:21 Volume:24 Page:6233-6239
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

John Philipp¹^ORCID,Trampert Achim¹^ORCID,Van Dinh Duc¹,Spallek Domenik¹,Lähnemann Jonas¹^ORCID,Kaganer Vladimir M.¹,Geelhaar Lutz¹^ORCID,Brandt Oliver¹^ORCID,Auzelle Thomas¹^ORCID

Affiliation:

1. Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V., Hausvogteiplatz 5-7, 10117 Berlin, Germany

Funder

Agence Nationale de la Recherche

Deutsche Forschungsgemeinschaft

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.4c00659

Reference51 articles.

1. The new nitrides: layered, ferroelectric, magnetic, metallic and superconducting nitrides to boost the GaN photonics and electronics eco-system

2. GaN/NbN epitaxial semiconductor/superconductor heterostructures

3. Rocksalt nitride metal/semiconductor superlattices: A new class of artificially structured materials

4. AlScN: A III-V semiconductor based ferroelectric

5. A Review of Transition Metal Nitride-Based Catalysts for Electrochemical Nitrogen Reduction to Ammonia

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