Controllable cubic and hexagonal GaN growth on GaAs(001) substrates by molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference19 articles.
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3. Effect of GaAs substrate orientation on the growth kinetic of GaN layer grown by MOVPE;Superlattices and Microstructures;2016-06
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