Degradation of dielectric breakdown field of thermal SiO2films due to structural defects in Czochralski silicon substrates
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.362344
Reference38 articles.
1. Catastrophic breakdown in silicon oxides: The effect of Fe impurities at the SiO2‐Si interface
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4. Defect-related gate oxide breakdown
5. Effect of oxidation‐induced stacking faults on dielectric breakdown characteristics of thermal silicon dioxide
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