Modeling of Defects Generation in 300 mm Silicon Monocrystals during Czochralski Growth
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference26 articles.
1. Octahedral-Structured Gigantic Precipitates as the Origin of Gate-Oxide Defects in Metal-Oxide-Semiconductor Large-Scale-Integrated Circuits
2. Degradation of dielectric breakdown field of thermal SiO2films due to structural defects in Czochralski silicon substrates
3. Drastic Improvements of Gate Oxide Reliability by Argon Annealing Compared with Hydrogen Annealing
4. The mechanism of swirl defects formation in silicon
5. Point Defect Dynamics and the Oxidation‐Induced Stacking‐Fault Ring in Czochralski‐Grown Silicon Crystals
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2. Control of Intrinsic Point Defects in Single-Crystal Si and Ge Growth from a Melt;Defects and Impurities in Silicon Materials;2015
3. On the role of thermal gradient related stress in intrinsic defect formation during single crystal silicon growth from the melt;Journal of Crystal Growth;2012-08
4. On the impact of stress on intrinsic defect formation during single crystal silicon growth;Physica B: Condensed Matter;2012-08
5. A study on density functional theory of the effect of pressure on the formation and migration enthalpies of intrinsic point defects in growing single crystal Si;Journal of Applied Physics;2012-05
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