Nitrogen-Doped Czochralski Silicon Wafers as Materials for Conventional and Scaled Insulated Gate Bipolar Transistors-Reference-Cited by-同舟云学术

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Nitrogen-Doped Czochralski Silicon Wafers as Materials for Conventional and Scaled Insulated Gate Bipolar Transistors

Published:2022-11 Issue:4 Volume:35 Page:620-625
ISSN:0894-6507
Container-title:IEEE Transactions on Semiconductor Manufacturing
language:
Short-container-title:IEEE Trans. Semicond. Manufact.

Author:

Kajiwara Kaoru¹^ORCID,Eriguchi Kazutaka²,Fusegawa Kazuhiro²,Mitsugi Noritomo²,Samata Shuichi²,Torigoe Kazuhisa²,Harada Kazuhiro¹,Hourai Masataka²,Nishizawa Shin-Ichi³^ORCID

Affiliation:

1. Crystal Engineering Department, Technology Division, SUMCO Corporation, Saga, Japan

2. Advanced Evaluation and Technology Department, Technology Division, SUMCO Corporation, Saga, Japan

3. Research Institute for Applied Mechanics, Kyushu University, Fukuoka, Japan

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Industrial and Manufacturing Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/66/9932145/09863701.pdf?arnumber=9863701

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Protocol for Thermal Donors Monitoring in High Resistivity Silicon Wafers;2024 35th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC);2024-05-13

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