Defect-related gate oxide breakdown-Reference-Cited by-同舟云学术

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Defect-related gate oxide breakdown

Published:1989-10 Issue:1-4 Volume:4 Page:359-366
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Bergholz W.,Mohr W.,Drewes W.,Wendt H.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference23 articles.

1. Extended Abstract no. 130, Vol. 89-1, ECS-Spring Meeting;Osamu,1988

2. Defects in Silicon;Yamabe,1984

3. On dielectric breakdown in oxidized silicon

4. Proc. Semi/Step Europe Conf., Defect Control and Related Yield Management;Bergholz,1988

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2. Effect of defects on reaction of NiO surface with Pb-contained solution;Scientific Reports;2017-03-20

3. Defects in Monocrystalline Silicon;Springer Handbook of Electronic and Photonic Materials;2017

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