Defect Engineering in Silicon Materials-Reference-Cited by-同舟云学术

Defect Engineering in Silicon Materials

Published:2015 Issue: Volume: Page:431-487
ISSN:0075-8450
Container-title:Defects and Impurities in Silicon Materials
language:
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Author:

Bergholz Werner

Publisher

Springer Japan

Link

http://link.springer.com/content/pdf/10.1007/978-4-431-55800-2_9

Reference43 articles.

1. Falster, R., Voronkov, V.V., Quast, F.: On the properties of intrinsic defects in silicon: a perspective from crystal growth and wafer processing. Phys. Stat. Sol (B) 222, 219 (2000)

2. SEMI M1 Standard for silicon wafers. http://ams.semi.org/ebusiness/standards/SEMIStandardDetail.aspx?ProductID=1948&DownloadID=3469

3. International Roadmap for Semiconductors ITRS. http://www.itrs.net/Links/2013ITRS/2013Chapters/2013Overview.pdf and International Technical Roadmap for Photovoltaics, http://www.itrpv.net/Reports/Downloads/

4. Kolbesen, B.O., Strunk, H.: VLSI electronics: microstructure science. In: Einspruch, N.G., Huff, H.R. (eds.) Silicon Materials, vol. 12, p. 143. Academic Press, New York (1985)

5. http://www.semi.org/Standards

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