Recombination via transition metals in solar silicon: The significance of hydrogen–metal reactions and lattice sites of metal atoms-Reference-Cited by-同舟云学术

Recombination via transition metals in solar silicon: The significance of hydrogen–metal reactions and lattice sites of metal atoms

Published:2017-06-12 Issue:7 Volume:214 Page:1700304
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Mullins J.¹,Leonard S.¹,Markevich V. P.¹,Hawkins I. D.¹,Santos P.²,Coutinho J.²,Marinopoulos A. G.²,Murphy J. D.³,Halsall M. P.⁴,Peaker A. R.⁴

Affiliation:

1. School of Electrical and Electronic EngineeringUniversity of ManchesterManchester M13 9PLUK

2. I3NDepartment of PhysicsUniversity of AveiroCampus SantiagoPT‐3810‐193 AveiroPortugal

3. School of EngineeringUniversity of WarwickCoventry CV4 7ALUK

4. Photon Science Institute and School of Electrical and Electronic EngineeringUniversity of ManchesterManchester M13 9PLUK

Funder

Engineering and Physical Sciences Research Council

Fundação para a Ciência e a Tecnologia

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.201700304

Reference28 articles.

1. Defect Engineering in Silicon Materials

2. Impurities in silicon solar cells

3. Recombination via point defects and their complexes in solar silicon

4. Sensitivity of state-of-the-art and high efficiency crystalline silicon solar cells to metal impurities

5. Impact of Metal Contamination in Silicon Solar Cells

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