Low-frequency noise in AlGaN/GaN heterojunction field effect transistors on SiC and sapphire substrates
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.372102
Reference26 articles.
1. Experimental studies on 1/f noise
2. AlGaN/GaN high electron mobility field effect transistors with low 1/f noise
3. Low-frequency noise in GaN/GaAlN heterojunctions
4. Flicker noise in GaN/Al/sub 0.15/Ga/sub 0.85/N doped channel heterostructure field effect transistors
5. Low frequency noise and screening effects in AlGaN/GaN HEMTs
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2. Low-Frequency Noise Characterization of AlGaN/GaN HEMTs and MIS-HEMTs under UV Illumination;IEEE Transactions on Nanotechnology;2020
3. The demonstration of recessed anodes AlGaN/GaN Schottky barrier diodes using microwave cyclic plasma oxidation/wet etching techniques;Japanese Journal of Applied Physics;2019-06-17
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5. Electric Current and Noise in Long GaN Nanowires in the Space-Charge Limited Transport Regime;Fluctuation and Noise Letters;2017-02
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