Author:
Pang Chin-Sheng,Hwu Jenn-Gwo
Publisher
Springer Science and Business Media LLC
Subject
Condensed Matter Physics,General Materials Science
Reference36 articles.
1. Kim NS, Austin T, Baauw D, Mudge T, Flautner K, Hu JS, Irwin MJ, Kandemir M, Narayanan V: Leakage current: Moore’s law meets static power. IEEE computer 2003, 36: 68–74.
2. Tang S, Wallance RM, Seabaugh A, King-Smith D: Evaluating the minimum thickness of gate oxide on silicon using first-principles method. Appl Surf Sci 1998, 135: 137–142. 10.1016/S0169-4332(98)00286-4
3. Muller DA, Sorsch T, Moccio S, Baumann FH, Evans-Lutterodt K, Timp G: The electronic structure at the atomic scale of ultrathin gate oxides. Nature 1999, 399: 758–761. 10.1038/21602
4. Timp G, Agarwal A, Baumann FH, Boone T, Buonanno M, Cirelli R, Donnelly V, Foad M, Grant D, Green M, Gossmann H, Hillenius S, Jackson J, Jacobson D, Kleiman R, Komblit A, Klemens F, Lee JT-C, Mansfield W, Moccio S, Murrell A, O'Malley M, Rosamilia J, Sapjeta J, Silverman P, Sorsch T, Tai WW, Tennant D, Vuong H, Weir B: Low leakage, ultra-thin gate oxides for extremely high performance sub-100 nm nMOSFETs. IEEE Int Electron Devices Meeting 1997, 930. doi:10.1109/IEDM.1997.650534 doi:10.1109/IEDM.1997.650534
5. Cho MH, Ko DH, Choi YG, Lyo IW, Jeong K, Whang CN: YSi2-x formation in the presence of interfacial SiO2 layer. J Appl Phys 2002, 92: 5555–5559. 10.1063/1.1512323
Cited by
8 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献