Leakage Current Behavior in HfO2/SiO2/Al2O3 Stacked Dielectric on 4H-SiC Substrate
Author:
Affiliation:
1. School of Information Science and Technology, Dalian Maritime University, Dalian, China
2. Department of Antenna and Microwave System Research, Yangzhou Marine Electronic Instrument Institute, Yangzhou, China
Funder
National Research and Development Program for Major Research Instruments of China
Liaoning Provincial Natural Science Foundation of China
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials,Biotechnology
Link
http://xplorestaging.ieee.org/ielx7/6245494/10049274/10185548.pdf?arnumber=10185548
Reference43 articles.
1. Improvement in the breakdown endurance of high-κ dielectric by utilizing stacking technology and adding sufficient interfacial layer
2. Performance enhancement of Al/La2O3/ZrO2/4H–SiC MOS device with LaON as interfacial passivation layer
3. Structural and Insulating Behaviour of High-Permittivity Binary Oxide Thin Films for Silicon Carbide and Gallium Nitride Electronic Devices
4. Negative charge trapping effects in Al2O3 films grown by atomic layer deposition onto thermally oxidized 4H-SiC
5. Investigation of high-k/metal gate MOS capacitors annealed by microwave annealing as a post-metal annealing process
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1. Influence of buffer layer engineering in MoS2/CIPS vdW NCFET logic transistor;Physics Letters A;2024-10
2. Cristobalite formation on high-temperature oxidation of 4H-SiC surface based on silicon atom sublimation;Materials Today Communications;2024-08
3. Comparative Study of Plasma-Enhanced-Atomic-Layer-Deposited Al2O3/HfO2/SiO2 and HfO2/Al2O3/SiO2 Trilayers for Ultraviolet Laser Applications;ACS Applied Materials & Interfaces;2024-06-05
4. Impact of Buffer Layer on Mos2/Cips Vdw Ncfet Logic Transistor;2024
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