Performance Evaluation & Linearity Distortion Analysis for Plasma- Assisted Dual-Material Carbon Nanotube Field Effect Transistor with a SiO2-HfO2 Stacked Gate-Oxide Structure (DM-SGCNFET)-Reference-Cited by-同舟云学术

Performance Evaluation & Linearity Distortion Analysis for Plasma- Assisted Dual-Material Carbon Nanotube Field Effect Transistor with a SiO2-HfO2 Stacked Gate-Oxide Structure (DM-SGCNFET)

Published:2022-05-21 Issue:18 Volume:14 Page:12381-12391
ISSN:1876-990X
Container-title:Silicon
language:en
Short-container-title:Silicon

Author:

Kansal Mansha,Sharma Suresh C.^ORCID

Publisher

Springer Science and Business Media LLC

Subject

Electronic, Optical and Magnetic Materials

Link

https://link.springer.com/content/pdf/10.1007/s12633-022-01930-1.pdf

Reference32 articles.

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3. Ono Y, Kishimoto S, Ohno Y, Mizutani T (2010) Thin film transistors using PECVD-grown carbon nanotubes. Nanotechnology 21(20):205202

4. Qiu C, Zhang Z, Xiao M, Yang Y, Zhong D, Peng LM (2017) Scaling carbon nanotube complementary transistors to 5-nm gate lengths. Science 355(6322):271–276. https://doi.org/10.1126/science.aaj1628

5. Fahad HM, Hussain MM (2013) High-performance silicon nanotube tunneling FET for ultralow-power logic applications. IEEE Trans Electron Dev 60(3):1034–1039. https://doi.org/10.1109/TED.2013.2243151

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