Abstract
AbstractHigh-mobility Ge nMOSFETs with ZrO2 gate dielectric are demonstrated and compared against transistors with different interfacial properties of ozone (O3) treatment, O3 post-treatment and without O3 treatment. It is found that with O3 treatment, the Ge nMOSFETs with ZrO2 dielectric having a EOT of 0.83 nm obtain a peak effective electron mobility (μeff) of 682 cm2/Vs, which is higher than that of the Si universal mobility at the medium inversion charge density (Qinv). On the other hand, the O3 post-treatment with Al2O3 interfacial layer can provide dramatically enhanced-μeff, achieving about 50% μeff improvement as compared to the Si universal mobility at medium Qinv of 5 × 1012 cm−2. These results indicate the potential utilization of ZrO2 dielectric in high-performance Ge nMOSFETs.
Publisher
Springer Science and Business Media LLC
Subject
Condensed Matter Physics,General Materials Science
Reference27 articles.
1. Arimura H, Cott H, Boccardi G, Loo R, Wostyn R, Brus R, Capogreco R, Opdebeeck A, Witters A, Conard A, Suhard A, van Dorp A, Kenis A, Ragnarsson L-Å, Mitard L-Å, Holsteyns F, De Heyn V, Mocuta V, Collaert V, Horiguchi V (2019) A record GmSAT/SSSAT and PBTI reliability in Si-passivated Ge nFinFETs by improved gate stack surface preparation. In: VLSI Tech. Dig, pp T92–T93
2. Li Y-S, Wu C-Y, Liao C-Y, Huang W-H, Shieh J-M, Chou C-H, Chuang K-C, Luo J-D, Li W-S, Cheng H-C (2018) High-performance germanium thin-film transistors with single-crystal-like channel via continuous-wave laser crystallization. IEEE Electron Device Lett 39:1864–1867
3. Yang C-C, Shieh J-M, Hsieh T-Y, Huang W-H, Wang H-H, Shen C-H, Wu T-T, Chen C-Y, Chang-Liao K-S, Shiu J-H, Wu M-C, Yang F-L (2014) Vth adjustable self-aligned embedded source/drain Si/Ge nanowire FETs and dopant-free NVMs for 3D sequentially integrated circuit. In: IEDM Tech. Dig, pp 410–413
4. Zhang R, Lin JC, Yu X, Takenaka M, Takagi S (2014) Impact of plasma Postoxidation temperature on the electrical properties of Al2O3/GeOx/Ge pMOSFETs and nMOSFETs. IEEE Trans Electron Devices 61:416–422
5. Gong X, Zhou Q, Owen MHS, Xu MHS, Lei MHS, Chen S-H, Tsai S-H, Cheng C-C, Lin Y-R, Wu C-H, Ko C-H, Yeo Y-C (2014) InAlP-Capped (100) Ge nFETs with 1.06 nm EOT: achieving record high peak mobility and first integration on 300 mm Si substrate. In: IEDM Tech. Dig, pp 9.4.1–9.4.4
Cited by
6 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献