Vth adjustable self-aligned embedded source/drain Si/Ge nanowire FETs and dopant-free NVMs for 3D sequentially integrated circuit-Reference-Cited by-同舟云学术

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Vth adjustable self-aligned embedded source/drain Si/Ge nanowire FETs and dopant-free NVMs for 3D sequentially integrated circuit

Published:2014-12 Issue: Volume: Page:
ISSN:
Container-title:2014 IEEE International Electron Devices Meeting
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Author:

Yang Chih-Chao,Shieh Jia-Min,Hsieh Tung-Ying,Huang Wen-Hsien,Wang Hsing-Hsiang,Shen Chang-Hong,Wu Tsung-Ta,Chen Chun-Yuan,Chang-Liao Kuei-Shu,Shiu Jung-Hau,Wu Meng-Chyi,Yang Fu-Liang

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7038718/7046955/07047063.pdf?arnumber=7047063

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electrical, structural, morphological and photovoltaic properties of Au/n-Ge heterojunctions using V2O5 interfacial layer;Journal of Materials Science: Materials in Electronics;2024-07

2. High-Performance P-Type Germanium Tri-Gate FETs via Green Nanosecond Laser Crystallization and Counter Doping for Monolithic 3-D ICs;IEEE Journal of the Electron Devices Society;2023

3. Ge N-Channel MOSFETs with ZrO2 Dielectric Achieving Improved Mobility;Nanoscale Research Letters;2021-08-04

4. Comprehensive study of variability in poly-Si channel nanowire transistor;Japanese Journal of Applied Physics;2019-02-22

5. High-Performance Germanium Thin-Film Transistors With Single-Crystal-Like Channel via Continuous-Wave Laser Crystallization;IEEE Electron Device Letters;2018-12

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