High-Performance P-Type Germanium Tri-Gate FETs via Green Nanosecond Laser Crystallization and Counter Doping for Monolithic 3-D ICs-Reference-Cited by-同舟云学术

High-Performance P-Type Germanium Tri-Gate FETs via Green Nanosecond Laser Crystallization and Counter Doping for Monolithic 3-D ICs

Published:2023 Issue: Volume:11 Page:262-268
ISSN:2168-6734
Container-title:IEEE Journal of the Electron Devices Society
language:
Short-container-title:IEEE J. Electron Devices Soc.

Author:

Chung Hao-Tung¹^ORCID,Pan Yu-Ming²,Lin Nein-Chih³,Shih Bo-Jheng²^ORCID,Yang Chih-Chao³,Shen Chang-Hong³,Cheng Huang-Chung¹,Chen Kuan-Neng¹^ORCID

Affiliation:

1. Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu, Taiwan

2. International College of Semiconductor Technology, National Yang Ming Chiao Tung University, Hsinchu, Taiwan

3. National Applied Research Laboratories, Taiwan Semiconductor Research Institute, Hsinchu, Taiwan

Funder

National Science and Technology Council, Taiwan

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials,Biotechnology

Link

http://xplorestaging.ieee.org/ielx7/6245494/10049274/10109116.pdf?arnumber=10109116

Reference34 articles.

1. Superlateral growth of a-Ge film by excimer laser annealing

2. 300mm heterogeneous 3D integration of record performance layer transfer germanium PMOS with silicon NMOS for low power high performance logic applications;rachmady;IEDM Tech Dig,2019

3. Demonstration of scaled Ge p-channel FinFETs integrated on Si

4. High-Performance Germanium Thin-Film Transistors With Single-Crystal-Like Channel via Continuous-Wave Laser Crystallization

5. Junction-less poly-Ge FinFET and charge-trap NVM fabricated by laser-enabled low thermal budget processes

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