Junction-less poly-Ge FinFET and charge-trap NVM fabricated by laser-enabled low thermal budget processes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4954175
Reference23 articles.
1. Laser crystallization and structuring of amorphous germanium
2. Electrical properties of poly-Ge on glass substrate grown by two-step solid-phase crystallization
3. Impacts of oxygen passivation on poly-crystalline germanium thin film transistor
4. Operation of inverter and ring oscillator of ultrathin-body poly-Ge CMOS
5. High carrier mobility in orientation-controlled large-grain (≥50 μm) Ge directly formed on flexible plastic by nucleation-controlled gold-induced-crystallization
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