High carrier mobility in orientation-controlled large-grain (≥50 μm) Ge directly formed on flexible plastic by nucleation-controlled gold-induced-crystallization
Author:
Affiliation:
1. Department of Electronics, Kyushu University, 744 Motooka, Fukuoka 819-0395, Japan
2. JSPS Research Fellow, 5-3-1 Kojimachi, Chiyoda-ku, Tokyo 102-0083, Japan
Funder
Grant-in-Aid for Scientific Research from the Ministry of Education, Culture, Sport, Science, and Technology in Japan
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Reference35 articles.
1. High hole mobility in strained Ge channel of modulation-doped p-Si0.5Ge0.5/Ge/Si1−xGex heterostructure
2. Low-temperature formation (<500°C) of poly-Ge thin-film transistor with NiGe Schottky source/drain
3. High-Performance $\hbox{GeO}_{2}/\hbox{Ge}$ nMOSFETs With Source/Drain Junctions Formed by Gas-Phase Doping
4. High-Electron-Mobility $\hbox{Ge/GeO}_{2}$ n-MOSFETs With Two-Step Oxidation
5. Electrical properties of poly-Ge on glass substrate grown by two-step solid-phase crystallization
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