High carrier mobility in orientation-controlled large-grain (≥50 μm) Ge directly formed on flexible plastic by nucleation-controlled gold-induced-crystallization-Reference-Cited by-同舟云学术

High carrier mobility in orientation-controlled large-grain (≥50 μm) Ge directly formed on flexible plastic by nucleation-controlled gold-induced-crystallization

Published:2014-06-23 Issue:25 Volume:104 Page:252110
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Park Jong-Hyeok¹²,Kasahara Kenji¹,Hamaya Kohei¹,Miyao Masanobu¹,Sadoh Taizoh¹

Affiliation:

1. Department of Electronics, Kyushu University, 744 Motooka, Fukuoka 819-0395, Japan

2. JSPS Research Fellow, 5-3-1 Kojimachi, Chiyoda-ku, Tokyo 102-0083, Japan

Funder

Grant-in-Aid for Scientific Research from the Ministry of Education, Culture, Sport, Science, and Technology in Japan

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Reference35 articles.

1. High hole mobility in strained Ge channel of modulation-doped p-Si0.5Ge0.5/Ge/Si1−xGex heterostructure

2. Low-temperature formation (<500°C) of poly-Ge thin-film transistor with NiGe Schottky source/drain

3. High-Performance $\hbox{GeO}_{2}/\hbox{Ge}$ nMOSFETs With Source/Drain Junctions Formed by Gas-Phase Doping

4. High-Electron-Mobility $\hbox{Ge/GeO}_{2}$ n-MOSFETs With Two-Step Oxidation

5. Electrical properties of poly-Ge on glass substrate grown by two-step solid-phase crystallization

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