A record GmSAT/SSSAT and PBTI reliability in Si-passivated Ge nFinFETs by improved gate stack surface preparation-Reference-Cited by-同舟云学术

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A record GmSAT/SSSAT and PBTI reliability in Si-passivated Ge nFinFETs by improved gate stack surface preparation

Published:2019-06 Issue: Volume: Page:
ISSN:
Container-title:2019 Symposium on VLSI Technology
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Author:

Arimura H.,Cott D.,Boccardi G.,Loo R.,Wostyn K.,Brus S.,Capogreco E.,Opdebeeck A.,Witters L.,Conard T.,Suhard S.,Van Dorp D.,Kenis K.,Ragnarsson L.-A.,Mitard J.,Holsteyns F.,De Heyn V.,Mocuta D.,Collaert N.,Horiguchi N.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8766306/8776475/08776535.pdf?arnumber=8776535

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Extremely High-κ Hf_0.2Zr_0.8O₂ Gate Stacks Integrated Into Eight Stacked Ge_0.95Si_0.05 Nanowires and Nanosheets nFETs to Boost I_ON;IEEE Transactions on Electron Devices;2023-12

2. Fabrication and performance of highly stacked GeSi nanowire field effect transistors;Communications Engineering;2023-11-01

3. Channel Material Benchmarking of Si and Ge n- and pMOSFETs Considering Effects of Strain and Operating Temperature;IEEE Transactions on Electron Devices;2023-08

4. Significance of Overdrive Voltage in the Analysis or Short-Channel Behaviors of n-FinFET Devices;IEEE J ELECTRON DEVI;2022

5. Significance of Overdrive Voltage in the Analysis of Short-Channel Behaviors of n-FinFET Devices;IEEE Journal of the Electron Devices Society;2022

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