Significance of Overdrive Voltage in the Analysis of Short-Channel Behaviors of n-FinFET Devices-Reference-Cited by-同舟云学术

Significance of Overdrive Voltage in the Analysis of Short-Channel Behaviors of n-FinFET Devices

Published:2022 Issue: Volume:10 Page:281-288
ISSN:2168-6734
Container-title:IEEE Journal of the Electron Devices Society
language:
Short-container-title:IEEE J. Electron Devices Soc.

Author:

Eng Yi-Chuen¹^ORCID,Hu Luke¹^ORCID,Chang Tzu-Feng¹,Wang Chih-Yi¹,Hsu Steven¹,Cheng Osbert²^ORCID,Lin Chien-Ting¹,Lin Yu-Shiang¹,Tsai Zen-Jay¹,Yang Chih-Wei¹^ORCID,Lu Jim¹,Chen Steve Yi-Wen¹

Affiliation:

1. Technology Development Division, United Microelectronics Corporation, Tainan, Taiwan

2. Device Technology Development & Design Division, United Microelectronics Corporation, Tainan, Taiwan

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials,Biotechnology

Link

http://xplorestaging.ieee.org/ielx7/6245494/9714452/09738804.pdf?arnumber=9738804

Reference16 articles.

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4. Influence of Block Oxide Width on a Silicon-on-Partial-Insulator Field-Effect Transistor

5. A simple and accurate method to measure the threshold voltage of an enhancement-mode MOSFET;lee;IEEE Trans Electron Devices,1982

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