Interband Photoconductivity of Metamorphic InAs/InGaAs Quantum Dots in the 1.3–1.55-μm Window-Reference-Cited by-同舟云学术

Interband Photoconductivity of Metamorphic InAs/InGaAs Quantum Dots in the 1.3–1.55-μm Window

Published:2018-04-16 Issue:1 Volume:13 Page:
ISSN:1931-7573
Container-title:Nanoscale Research Letters
language:en
Short-container-title:Nanoscale Res Lett

Author:

Golovynskyi Sergii,Datsenko Oleksandr I.,Seravalli Luca,Trevisi Giovanna,Frigeri Paola,Babichuk Ivan S.,Golovynska Iuliia,Qu Junle^ORCID

Funder

the National Natural Science Foundation of China

National Basic Research Program of China

Guangdong Natural Science Foundation Innovation Team

Hong Kong, Macao and Taiwan cooperation innovation platform & major projects of international cooperation in Colleges and Universities in Guangdong Province

Shenzhen Basic Research Project

COST Action "Nanoscale Quantum Optics" of European Union

Publisher

Springer Science and Business Media LLC

Subject

Condensed Matter Physics,General Materials Science

Link

http://link.springer.com/content/pdf/10.1186/s11671-018-2524-3.pdf

Reference57 articles.

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3. Munoz-Matutano G, Barrera D, Fernandez-Pousa CR, Chulia-Jordan R, Seravalli L, Trevisi G et al (2016) All-optical fiber Hanbury Brown & Twiss interferometer to study 1300 nm single photon emission of a metamorphic InAs quantum dot. Sci Rep 6:27214

4. Semenova ES, Zhukov AE, Mikhrin SS, Egorov AY, Odnoblyudov VA, Vasil’ev AP et al (2004) Metamorphic growth for application in long-wavelength (1.3-1.55 μm) lasers and MODFET-type structures on GaAs substrates. Nanotechnology 15:S283–S2S7

5. Golovynskyi S, Seravalli L, Datsenko O, Trevisi G, Frigeri P, Gombia E et al (2017) Comparative study of photoelectric properties of metamorphic InAs/InGaAs and InAs/GaAs quantum dot structures. Nanoscale Res Lett 12:335

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