Comparative Study of Photoelectric Properties of Metamorphic InAs/InGaAs and InAs/GaAs Quantum Dot Structures-Reference-Cited by-同舟云学术

Comparative Study of Photoelectric Properties of Metamorphic InAs/InGaAs and InAs/GaAs Quantum Dot Structures

Published:2017-05-05 Issue:1 Volume:12 Page:
ISSN:1931-7573
Container-title:Nanoscale Research Letters
language:en
Short-container-title:Nanoscale Res Lett

Author:

Golovynskyi Sergii,Seravalli Luca,Datsenko Oleksandr,Trevisi Giovanna,Frigeri Paola,Gombia Enos,Golovynska Iuliia,Kondratenko Serhiy V.,Qu Junle,Ohulchanskyy Tymish Y.

Funder

National Natural Science Foundation of China

National Basic Research Program of China

Guangdong Natural Science Foundation Innovation Team

Hong Kong, Macao and Taiwan cooperation innovation platform major projects of international cooperation in Colleges and Universities in Guangdong Province

Shenzhen Basic Research Project

European Cooperation in Science and Technology

Publisher

Springer Science and Business Media LLC

Subject

Condensed Matter Physics,General Materials Science

Link

http://link.springer.com/content/pdf/10.1186/s11671-017-2091-z.pdf

Reference56 articles.

1. Balakrishnan G, Huang S, Rotter TJ, Stintz A, Dawson LR, Malloy KJ, Xu H, Huffaker DL (2004) 2.0 μm wavelength InAs quantum dashes grown on a GaAs substrate using a metamorphic buffer layer. Appl Phys Lett 84:2058

2. Semenova ES, Zhukov AE, Mikhrin S, Egorov AY, Odnoblyudov VA, Vasilev AP, Nikitina EV, Kovsh AR, Kryzhanovskaya NV, Gladyschev AY, Blokhin SA, Musikhin YG, Maksimov MV, Shernyakov YM, Ustinov VM, Ledentsov NN (2004) Metamorphic growth for application in long-wavelength (1.3–1.55 μm) lasers and MODFET-type structures on GaAs substrates. Nanotechnology 15:S283

3. Seravalli L, Minelli M, Frigeri P, Allegri P, Avanzini V, Franchi S (2003) The effect of strain on tuning of light emission energy of InAs/InGaAs quantum-dot nanostructures. Appl Phys Lett 82:2341