Hopping transport in the space-charge region of p-n structures with InGaN/GaN QWs as a source of excess 1/f noise and efficiency droop in LEDs-Reference-Cited by-同舟云学术

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Hopping transport in the space-charge region of p-n structures with InGaN/GaN QWs as a source of excess 1/f noise and efficiency droop in LEDs

Published:2015-06 Issue:6 Volume:49 Page:827-835
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Bochkareva N. I.,Ivanov A. M.,Klochkov A. V.,Kogotkov V. S.,Rebane Yu. T.,Virko M. V.,Shreter Y. G.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782615060056.pdf

Reference30 articles.

1. Y. C. Shen, G. O. Mueller, S. Watanabe, N. F. Gardner, A. Munkholm, and M. R. Krames, Appl. Phys. Lett. 91, 141101 (2007).

2. T. Mukai, M. Yamada, and S. Nakamura, Jpn. J. Appl. Phys. pt 1 38, 3976 (1999).

3. N. I. Bochkareva, D. V. Tarkhin, Yu. T. Rebane, R. I. Gorbunov, Yu. S. Lelikov, I. A. Martynov, and Yu. G. Shreter, Semiconductors 41, 87 (2007).

4. J. Hader, J. V. Moloney, and S. W. Koch, Appl. Phys. Lett. 96, 221106 (2010).

5. T. J. Badcook, S. Hammersley, D. Watson-Parris, P. Dawson, M. J. Godfrey, M. J. Kappers, C. McAleese, R. A. Oliver, and C. J. Humphreys, Jpn. J. Appl. Phys. 52, 08JK10 (2013).

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1. Low-Frequency Noise in Light-Emitting Diodes Based on InGaN/GaN Quantum Wells under Electric Actions Accompanied with an Increase in the External Quantum Efficiency;Technical Physics;2021-01

2. Research on 1/f noise degradation of GaN LED caused by γ radiation under high bias;Semiconductor Science and Technology;2020-07-03

3. Research on Degradation of GaN-Based Blue LED Caused by γ Radiation under Low Bias;International Journal of Optics;2020-02-24

4. Operating behavior of micro-LEDs on a GaN substrate at ultrahigh injection current densities;Optics Express;2019-07-16

5. Current Noise and Efficiency Droop of Light-Emitting Diodes in Defect-Assisted Carrier Tunneling from an InGaN/GaN Quantum Well;Semiconductors;2019-01

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