Carrier Density Dependent Localization and Consequences for Efficiency Droop in InGaN/GaN Quantum Well Structures-Reference-Cited by-同舟云学术

Carrier Density Dependent Localization and Consequences for Efficiency Droop in InGaN/GaN Quantum Well Structures

Published:2013-08-01 Issue:8S Volume:52 Page:08JK10
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Badcock Tom J.,Hammersley Simon,Watson-Parris Duncan,Dawson Phil,Godfrey Mike J.,Kappers Menno J.,McAleese Clifford,Oliver Rachel A.,Humphreys Colin J.

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference27 articles.

1. On the efficiency droop in InGaN multiple quantum well blue light emitting diodes and its reduction with p-doped quantum well barriers

2. Carrier leakage in InGaN quantum well light-emitting diodes emitting at 480 nm

3. Blue-emitting InGaN–GaN double-heterostructure light-emitting diodes reaching maximum quantum efficiency above 200A∕cm2

4. On resonant optical excitation and carrier escape in GaInN/GaN quantum wells

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