Operating behavior of micro-LEDs on a GaN substrate at ultrahigh injection current densities-Reference-Cited by-同舟云学术

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Operating behavior of micro-LEDs on a GaN substrate at ultrahigh injection current densities

Published:2019-07-16 Issue:16 Volume:27 Page:A1146
ISSN:1094-4087
Container-title:Optics Express
language:en
Short-container-title:Opt. Express

Author:

Li C. C.,Zhan J. L.,Chen Z. Z.,Jiao F.,Chen Y. F.,Chen Y. Y.,Nie J. X.^ORCID,Kang X. N.,Li S. F.,Wang Q.,Zhang G. Y.,Shen B.

Funder

National Key Research and Development Program

Science and Technology Major Project of Guangdong Province

Science and Technology Planning Project of Henan Province

National Natural Science Foundation of China (NSFC)

Beijing Municipal Science and Technology Commission

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics

Reference40 articles.

1. High Bandwidth GaN-Based Micro-LEDs for Multi-Gb/s Visible Light Communications

2. III-nitride micro-emitter arrays: development and applications

3. Optoelectronic tweezers system for single cell manipulation and fluorescence imaging of live immune cells

4. Superior characteristics of microscale light emitting diodes through tightly lateral oxide-confined scheme

5. Capability of GaN based micro-light emitting diodes operated at an injection level of kA/cm^2

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