Superior characteristics of microscale light emitting diodes through tightly lateral oxide-confined scheme-Reference-Cited by-同舟云学术

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Superior characteristics of microscale light emitting diodes through tightly lateral oxide-confined scheme

Published:2017-01-09 Issue:2 Volume:110 Page:021108
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Huang Shen-Che¹,Li Heng¹,Zhang Zhe-Han¹,Chen Hsiang²,Wang Shing-Chung¹,Lu Tien-Chang¹^ORCID

Affiliation:

1. Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 Ta-Hsueh Rd., Hsinchu 30010, Taiwan

2. Department of Applied Materials and Optoelectronic Engineering, National Chi Nan University, 1 Ta-Hsueh Rd., Puli 54561, Taiwan

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4973966

Reference32 articles.

1. Droop in InGaN light-emitting diodes: A differential carrier lifetime analysis

2. Measurement of electron overflow in 450 nm InGaN light-emitting diode structures

3. Hole transport improvement in InGaN/GaN light-emitting diodes by graded-composition multiple quantum barriers

4. Origin of efficiency droop in GaN-based light-emitting diodes

5. Polarization-matched GaInN∕AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop

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5. Growth of GaN Hexagonal Arrays on Partially Crystallized Sapphire Nanomembranes for Micro-Light-Emitting Diodes;Crystal Growth & Design;2022-12-22

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