Density-activated defect recombination as a possible explanation for the efficiency droop in GaN-based diodes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3446889
Reference13 articles.
1. Characteristics of InGaN-Based UV/Blue/Green/Amber/Red Light-Emitting Diodes
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3. Supression of carrier recombination in semiconductor lasers by phase-space filling
4. Direct measurement of auger recombination in In0.1Ga0.9N/GaN quantum wells and its impact on the efficiency of In0.1Ga0.9N/GaN multiple quantum well light emitting diodes
5. On the importance of radiative and Auger losses in GaN-based quantum wells
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