A Light-Emitting Diode Based on AlInGaN Heterostructures Grown on SiC/Si Substrates and Its Fabrication Technology-Reference-Cited by-同舟云学术

A Light-Emitting Diode Based on AlInGaN Heterostructures Grown on SiC/Si Substrates and Its Fabrication Technology

Published:2022-02 Issue:2 Volume:48 Page:31-34
ISSN:1063-7850
Container-title:Technical Physics Letters
language:en
Short-container-title:Tech. Phys. Lett.

Author:

Markov L. K.,Kukushkin S. A.,Smirnova I. P.,Pavlyuchenko A. S.,Grashchenko A. S.,Osipov A. V.,Svyatets G. V.,Nikolaev A. E.,Sakharov A. V.,Lundin V. V.,Tsatsulnikov A. F.

Publisher

Pleiades Publishing Ltd

Subject

Physics and Astronomy (miscellaneous)

Link

https://link.springer.com/content/pdf/10.1134/S1063785022020043.pdf

Reference7 articles.

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2. S. A. Kukushkin, A. V. Osipov, S. G. Zhukov, E. E. Zavarin, W. V. Lundin, M. A. Sinitsyn, M. M. Rozhavskaya, A. F. Tsatsulnikov, S. I. Troshkov and N. A. Feoktistov, Tech. Phys. Lett. 38, 297 (2012). https://doi.org/10.1134/S1063785012030261

3. S. A. Kukushkin and A. V. Osipov, Materials 14, 78 (2021). https://doi.org/10.3390/ma14010078

4. N. A. Cherkashin, A. F. Tsatsulnikov, A. V. Sakharov, A. E. Nikolaev, V. V. Lundin, S. O. Usov, A. S. Grashchenko, S. A. Kukushkin, and A. A. Osipov, Tech. Phys. Lett. 47 (2021, in press).

5. S. A. Kukushkin, A. V. Osipov, and N. A. Feoktistov, Phys. Solid State 56, 1507 (2014). https://doi.org/10.1134/S1063783414080137

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