Peculiarities of Epitaxial Growth of III–N LED Heterostructures on SiC/Si Substrates-Reference-Cited by-同舟云学术

Peculiarities of Epitaxial Growth of III–N LED Heterostructures on SiC/Si Substrates

Published:2021-12-20 Issue: Volume: Page:
ISSN:1063-7850
Container-title:Technical Physics Letters
language:en
Short-container-title:Tech. Phys. Lett.

Author:

Cherkashin N. A.,Sakharov A. V.,Nikolaev A. E.,Lundin V. V.,Usov S. O.,Ustinov V. M.,Grashchenko A. S.,Kukushkin S. A.,Osipov A. V.,Tsatsul’nikov A. F.

Publisher

Pleiades Publishing Ltd

Subject

Physics and Astronomy (miscellaneous)

Link

https://link.springer.com/content/pdf/10.1134/S106378502108006X.pdf

Reference9 articles.

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