Synthesis of epitaxial silicon carbide films through the substitution of atoms in the silicon crystal lattice: A review-Reference-Cited by-同舟云学术

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Synthesis of epitaxial silicon carbide films through the substitution of atoms in the silicon crystal lattice: A review

Published:2014-08 Issue:8 Volume:56 Page:1507-1535
ISSN:1063-7834
Container-title:Physics of the Solid State
language:en
Short-container-title:Phys. Solid State

Author:

Kukushkin S. A.,Osipov A. V.,Feoktistov N. A.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063783414080137.pdf

Reference75 articles.

1. A. A. Lebedev, Khim. Zhizn’, No. 4, 14 (2006).

2. E. G. Acheson, Chem. News 68, 179 (1893).

3. J. A. Lely, Ber. Dtsch. Keram. Ges. 32, 229 (1955).

4. Silicon Carbide: Materials, Processing, and Devices, Ed. by Zhe Chuan Feng and Jian H. Zhao (Taylor and Francis New York (2004), Vols. 1–2.

5. A. Fissel, Phys. Rep. 379, 149 (2003).

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