Simulating the nucleation and growth of Ge quantum dots on Si using high-efficiency algorithms
Author:
Publisher
Pleiades Publishing Ltd
Subject
General Engineering,Condensed Matter Physics,General Materials Science
Link
http://link.springer.com/content/pdf/10.1134/S1995078015020147.pdf
Reference25 articles.
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3. C. Dais, H. H. Solak, Ya. Ekinci, et al., “Ge quantum dot molecules and crystals: preparation and properties,” Surf. Sci. 601 (13), 2787 (2007).
4. Zh. Smagina, P. Novikov, V. Zinovyev, N. Stepina, A. Dvurechenskii, Vl. Armbrister, V. Seleznev, and P. Kuchinskaya, “Nucleation and epitaxial growth of Ge nanoislands on Si surface prepatterned by ion irradiation,” Phys. Status Solidi A 210 (8), 1522 (2013).
5. J. Tersoff, “New empirical approach for the structure and energy of covalent systems,” Phys. Rev. B 37 (12), 6991 (1988).
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