Tuning the configuration of quantum dot molecules grown on stacked multilayers of heteroepitaxial islands
Author:
Affiliation:
1. Rzhanov Institute of Semiconductor Physics, pr. Lavrent’eva, 13, Novosibirsk 630090, Russia
2. Department of Physics, Novosibirsk State University, Pirogova, 2, Novosibirsk 630090, Russia
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
https://aip.scitation.org/doi/pdf/10.1063/5.0075991
Reference21 articles.
1. Growth of single crystalline films on lattice-mismatched substrates through 3D to 2D mode transition
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4. Stranski-Krastanow growth of tensile strained Si islands on Ge (001)
5. Strain relaxation in high Ge content SiGe layers deposited on Si
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