Nucleation and epitaxial growth of Ge nanoislands on Si surface prepatterned by ion irradiation-Reference-Cited by-同舟云学术

Nucleation and epitaxial growth of Ge nanoislands on Si surface prepatterned by ion irradiation

Published:2013-07-05 Issue:8 Volume:210 Page:1522-1524
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Smagina Zhanna¹,Novikov Pavel¹²,Zinovyev Vladimir¹,Stepina Natalya¹,Dvurechenskii Anatoly¹²,Armbrister Vladislav¹,Seleznev Vladimir¹,Kuchinskaya Polina¹

Affiliation:

1. Rzhanov Institute of Semiconductor Physics; Russian Academy of Science; pr. Lavrent'eva 13 630090 Novosibirsk Russia

2. Novosibirsk State University; Pirogova 2 630090 Novosibirsk Russia

Funder

RFBR

Scientific and educational personnel of innovation Russia

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssa.201200906/fullpdf

Reference12 articles.

1. Self-assembled Si and SiGe nanostructures: New growth concepts and structural analysis

2. Ge quantum dot molecules and crystals: Preparation and properties

3. Long-range ordered lines of self-assembled Ge islands on a flat Si (001) surface

4. Mechanisms of self-ordering in nonplanar epitaxy of semiconductor nanostructures

5. In situ Control of Si/Ge Growth on Stripe-Patterned Substrates Using Reflection High-Energy Electron Diffraction and Scanning Tunneling Microscopy

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1. Nucleation of Three-Dimensional Ge Islands on a Patterned Si(100) Surface;Semiconductors;2018-10-18

2. Nucleation sites of Ge nanoislands grown on pit-patterned Si substrate prepared by electron-beam lithography;Journal of Applied Physics;2018-04-28

3. Effect of Interstitials Embedded in Pre‐Patterned Si Substrate on Location of Ge Nanoislands;physica status solidi c;2017-11-02

4. Spatially arranged chains of Ge quantum dots grown on Si substrate prepatterned by ion-beam-assisted nanoimprint lithography;physica status solidi (c);2016-09-07

5. Simulating the nucleation and growth of Ge quantum dots on Si using high-efficiency algorithms;Nanotechnologies in Russia;2015-03