Self-assembled Si and SiGe nanostructures: New growth concepts and structural analysis-Reference-Cited by-同舟云学术

Self-assembled Si and SiGe nanostructures: New growth concepts and structural analysis

Published:2006-11 Issue:14 Volume:203 Page:3496-3505
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:phys. stat. sol. (a)

Author:

Bauer G.,Schäffler F.

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference32 articles.

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2. High-mobility Si and Ge structures

3. Coarsening of Self-Assembled Ge Quantum Dots on Si(001)

4. D. P. Divincenzo, G. Burkard, D. Loss, and E. V. Sukhorukov, cond-mat/9911245.

5. Epitaxially Self-Assembled Quantum Dots

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