Single phase Si1−xGex nanocrystals and the shifting of the E1 direct energy transition-Reference-Cited by-同舟云学术

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Single phase Si1−xGex nanocrystals and the shifting of the E1 direct energy transition

Published:2015-08-25 Issue:37 Volume:26 Page:375701
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Ha Ngo Ngoc,Giang Nguyen Truong,Thuy Truong Thi Thanh,Trung Nguyen Ngoc,Dung Nguyen Duc,Saeed Saba,Gregorkiewicz Tom

Funder

Vietnam National Foundation for Science and Technology Development (NAFOSTED)

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://stacks.iop.org/0957-4484/26/i=37/a=375701/pdf

Reference32 articles.

1. Intrinsic Optical Absorption in Germanium-Silicon Alloys

2. Electroreflectance spectroscopy of strainedSi1−xGexlayers on silicon

3. Spectroscopic ellipsometry characterization of strained and relaxed Si1−xGexepitaxial layers

4. High-Speed Silicon-Germanium Electronics

5. Novel Si1−xGex/Si heterojunction internal photoemission long‐wavelength infrared detectors

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1. Bandgap atomistic calculations on hydrogen-passivated GeSi nanocrystals;Scientific Reports;2021-06-30

2. Photon absorption and scattering of Ge nanocrystals embedded in SiO2 prepared by co-sputtering;Physica B: Condensed Matter;2021-01

3. Influence of SiGe Nanocrystallization on Short-Wave Infrared Sensitivity of SiGe–TiO2 Films and Multilayers;The Journal of Physical Chemistry C;2020-10-29

4. Absorption of Si, Ge, and SiGe alloy nanocrystals embedded in SiO2 matrix;Journal of Applied Physics;2020-03-21

5. SiGe nanocrystals in SiO2 with high photosensitivity from visible to short-wave infrared;Scientific Reports;2020-02-24

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