Absorption of Si, Ge, and SiGe alloy nanocrystals embedded in SiO2 matrix
Author:
Affiliation:
1. Ioffe Institute, St. Petersburg 194021, Russia
2. International Training Institute for Materials Science, Hanoi University of Science and Technology, No. 1 Dai Co Viet Road, Hanoi, Vietnam
Funder
Russian Foundation for Basic Research
Vietnam-Russia academic cooperation program
Foundation for the Advanement of Theoretical Physics and Mathematics "BASIS"
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5139960
Reference45 articles.
1. Electron spin resonance study of defects in Si1−xGex alloy nanocrystals embedded in SiO2 matrices: Mechanism of luminescence quenching
2. Single phase Si1−xGex nanocrystals and the shifting of the E1 direct energy transition
3. Spectral probing of carrier traps in Si-Ge alloy nanocrystals
4. A Review on Ge Nanocrystals Embedded in SiO2and High-k Dielectrics
5. Tuning the growth properties of Ge quantum dot lattices in amorphous oxides by matrix type
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